Referenced Items are not available for this document.
A novel GaInAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as 7 mA have been measured at 25 degrees C on 220 mu m long devices. These are the lowest values reported for 1.5 mu m DFB lasers on semi-insulating substrate.
Published in:
Electronics Letters
(Volume:26
,
Issue:
13
)
Date of Publication: 21 June 1990
- Page(s):
- 933 - 934
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3688676
- Digital Object Identifier :
- 10.1049/el:19900609
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 21 June 1990
- Sponsored by :
- Institution of Engineering and Technology
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