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A novel GaInAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as 7 mA have been measured at 25 degrees C on 220 mu m long devices. These are the lowest values reported for 1.5 mu m DFB lasers on semi-insulating substrate.