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n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy

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4 Author(s)
N. Nishiyama ; Sumitomo Electr. Ind. Ltd., Yokohama, Japan ; H. Yano ; S. Nakajima ; H. Hayashi

A pseudomorphic modulation-doped field effect transistor (MODFET) using a (InAs)3(GaAs)1 superlattice as a channel layer has been successfully demonstrated. The device was grown by molecular beam epitaxy. The MODFET with 0.85 mu m gate length exhibits maximum external DC transconductance and current gain cut-off frequency of 475 mS/mm and 28.5 GHz, respectively.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 13 )