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Browse Journals & Magazines > Electronics Letters ...> Volume:26 Issue:13 Help

n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy

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4 Author(s)
Nishiyama, N. ; Sumitomo Electr. Ind. Ltd., Yokohama, Japan ; Yano, H. ; Nakajima, S. ; Hayashi, H.

A pseudomorphic modulation-doped field effect transistor (MODFET) using a (InAs)3(GaAs)1 superlattice as a channel layer has been successfully demonstrated. The device was grown by molecular beam epitaxy. The MODFET with 0.85 mu m gate length exhibits maximum external DC transconductance and current gain cut-off frequency of 475 mS/mm and 28.5 GHz, respectively.

Published in:
Electronics Letters  (Volume:26 ,  Issue: 13 )

Date of Publication: 21 June 1990

Page(s):
885 - 886
ISSN :
0013-5194
INSPEC Accession Number:
3709641
Digital Object Identifier :
10.1049/el:19900578
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
21 June 1990
Sponsored by :
Institution of Engineering and Technology

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