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Browse Journals & Magazines > Electronics Letters ...> Volume:26 Issue:13 Help

Anisotype, enhancement-mode, heterojunction gate field-effect transistors

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3 Author(s)
Lin, C.L. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA ; Wieder, H.H. ; Zuleeg, R.

Anisotype, p+-GaAs/n-In0.15Ga0.85As heterojunction field-effect transistors, grown by molecular beam epitaxy and fabricated by a self-aligned process, have been investigated for digital logic applications. Peak transconductance of 411 mS/mm and a K-value of 292 mA/V2/mm were obtained for an enhancement-mode device with gate length of 1 mu m. Preliminary analysis of a nonisolated device leads to a cut off frequency of 17.5 GHz.

Published in:
Electronics Letters  (Volume:26 ,  Issue: 13 )

Date of Publication: 21 June 1990

Page(s):
846 - 847
ISSN :
0013-5194
INSPEC Accession Number:
3688651
Digital Object Identifier :
10.1049/el:19900554
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
21 June 1990
Sponsored by :
Institution of Engineering and Technology

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