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Selective silicon epitaxial growth by LPCVD using silane

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2 Author(s)
G. J. Parker ; Dept. of Electron. & Comput. Sci., Southampton Univ., UK ; C. M. K. Starbuck

Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 mu m thickness showing excellent uniformity and selectivity without the use of HCl are presented.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 13 )