By Topic

New semiconductor hetero-substrates for high temperature applications using the Smart-Cut(R) technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Aspar, B. ; Dept. de Microtechnol., CEA, Centre d''Etudes Nucleaires de Grenoble, France ; Joly, J.-P. ; Jaussaud, Claude ; Di Cioccio, L.
more authors

Use of thin monocrystalline semiconductor film transfer by Smart-Cut(R) technology is of great interest for new device technologies especially in the field of high temperature electronics. In this paper we give an overview of recent results on two kind of hetero-substrates obtained by this process: UNIBOND(R) SOI (Silicon On Insulator) substrates and substrates based on Silicon Carbide layer transfer. The latest progress on SOI wafer quality is highlighted. For SiC transfer, we describe the kinetics of SiC layer splitting, and the morphological and electrical characteristics of the SiC layers. We also show that SiC/Si3N4/polycrystalline SiC structures can be fabricated using Smart-Cut technology. Polycrystalline SiC and silicon nitride have been chosen to replace the silicon substrate and silicon dioxide layers to make the overall structure compatible with very high temperature device processing and very harsh device environments

Published in:

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Date of Conference:

1999