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High temperature silicon-on-insulator pressure sensor technology

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1 Author(s)
R. L. Johnson ; Honeywell Inc., Plymouth, MN, USA

In this paper the recent development of a high sensitivity high temperature Silicon-On-Insulator (SOI) piezoresistive sensor technology that provides pressure sensing, temperature sensing, and feedback and bias resistor networks all integrated on a single miniature chip that measures only 0.23 cm software (90 mils square) is reported. This advanced sensor technology also provides sheet resistivities of approximated 3 times greater than conventional bulk silicon sensors while maintaining the same dopant concentration of the p-type resistor elements. The new chip design features a high impedance 30 K/spl Omega/ pressure bridge which provides a full scale output of 200 milli-volt per volt of excitation. This corresponds to a /spl Delta/R/R gage factor of 0.20. Also featured is a high impedance 60 K/spl Omega/ temperature bridge with an output sensitivity of 1.2 milli-volt per /spl deg/C per volt of excitation. This high temperature SOI sensor technology complements Honeywell's HTMOS high temperature electronics product line which provides both analog devices (including quad amplifiers and switches, fluxes, A/D's, and voltage references) and digital devices (including SRAMs, microcontrollers and clock generators) with operation up to 300/spl deg/C. This dual capability of high temperature sensors and high temperature electronics provides all the required functional blocks needed for designing complete sensor systems for an array of high temperature applications.

Published in:

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Date of Conference:

7-7 July 1999