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Ultra-high gain, low noise monolithic InP HEMT distributed amplifier from 5 to 40 GHz

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7 Author(s)
Yuen, C. ; Varian Res. Center Palo Alto, CA, USA ; Poo, Y.-C. ; Day, M. ; Nishmimoto, C.
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A monolithic 5-45 GHz distributed amplifier has been developed utilising 0.25 mu m InAlAs/InGaAs lattice matched HEMTs with a mushroom gate profile as active devices. A measured gain of 12.5+or-0.5 dB from 5 to 40 GHz and a measured noise figure of 2.5-4 dB in the Ka-band were achieved.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 8 )

Date of Publication:

14 April 1990

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