Referenced Items are not available for this document.
Visible light (670 nm), compressively strained single-quantum-well GaInP-AlGaInP lasers were fabricated from epitaxial wafers grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). By investigation on selenium doping in n-type cladding layers, high quality GaInP-AlGaInP lasers that emit around a wavelength of 670 nm were realized, which have an ultralow-threshold current density of 238 A/cm/sub 2/, high characteristic temperature of 150 K in the pulse mode. Additionally, a record high power of 1.55 W per facet (3.11 W total) was achieved for the broad-area gain guided lasers.
Published in:
Photonics Technology Letters, IEEE
(Volume:12
,
Issue:
3
)
Date of Publication: March 2000
- Page(s):
- 248 - 250
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 6555876
- Digital Object Identifier :
- 10.1109/68.826903
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 2000
- Sponsored by :
- IEEE Photonics Society
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