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Selenium doping effects and low-threshold high-power GaInP-AlGaInP single-quantum-well lasers grown by MOVPE

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2 Author(s)
Wu, Linzhang ; Dept. of Precision Instrum., Tsinghua Univ., Beijing, China ; Yanshen Zhang

Visible light (670 nm), compressively strained single-quantum-well GaInP-AlGaInP lasers were fabricated from epitaxial wafers grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). By investigation on selenium doping in n-type cladding layers, high quality GaInP-AlGaInP lasers that emit around a wavelength of 670 nm were realized, which have an ultralow-threshold current density of 238 A/cm/sub 2/, high characteristic temperature of 150 K in the pulse mode. Additionally, a record high power of 1.55 W per facet (3.11 W total) was achieved for the broad-area gain guided lasers.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 3 )