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Low-threshold oxide-confined 1.3-μm quantum-dot laser

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4 Author(s)
Park, G. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Shchekin, O.B. ; Huffaker, D.L. ; Deppe, D.G.

Data are presented on low threshold, 1.3-/spl mu/m oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm/sup 2/ is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm/sup 2/.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 3 )

Date of Publication:

March 2000

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