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A simplified procedure to calculate the power gain definitions of FETs

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1 Author(s)
Paoloni, C. ; Dept. of Electron. Eng., Rome Univ., Italy

A graphical method to easily derive the power gain definitions of field-effect transistors (FETs) is proposed in this paper. This method is applicable to MESFETs and high electron-mobility transistors described by the typical π model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains. The accuracy of this approach has been proven by comparison with simulations of the FET complete model

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 3 )