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A simplified broad-band large-signal nonquasi-static table-based FET model

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8 Author(s)
Fernandez-Barciela, M. ; Dept. of Tecnologias de las Communicaciones, Univ. of Vigo, Spain ; Tasker, P.J. ; Campos-Roca, Y. ; Demmler, M.
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In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the γ-parameters at high frequencies is taken into account through the use of linear delays. This model is suitable for applications related to nonlinear microwave computer-aided design and can be both easily extracted from dc and S-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will be described in this paper. Excellent results are obtained from dc up to the device fT frequencies, even when f T is as high as 100 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 3 )