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Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 mu m

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4 Author(s)
Bigan, E. ; CNET, Lab. de Bagneux, France ; Allovon, M. ; Carre, M. ; Carenco, A.

Strain is used to tailor the absorption edge of thick (100 AA) quantum wells. This allows efficient modulation at 1.55 mu m. An extinction ratio of 18 dB has been achieved by applying a reverse bias of 6 V to a 160 mu m long waveguide device.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 6 )