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Vertical integration of an In0.15Ga0.85As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy

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5 Author(s)

A vertically integrated structure consisting of an In0.15Ga0.85As pseudomorphic modulation doped field effect transistor (MODFET) and a GaAs graded index separate confinement heterostructure single quantum well (GRINSCH SQW) laser was grown by molecular beam epitaxy. Wafers containing integrated MODFET/laser layers produced MODFETs with DC and microwave performance comparable to wafers containing only MODFET layers, indicating that the modulation doping and the strained In0.15Ga0.85As channel were largely unaffected by the long, high temperature laser growth. The lasers had threshold currents similar to identical structures grown on n-type substrates and the integrated structures had a -3dB modulation bandwidth of 3.5 GHz.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 6 )