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Noise tuning of GaAs-MESFET oscillators

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1 Author(s)
Kreischer, L. ; Lehrstuhl fur Hochfrequenztech., Erlangen-Nurnberg Univ., West Germany

The main cause of phase-noise in microwave GaAs-MESFET oscillators is the upconversion of the 1/f noise from the baseband. A large signal analysis of an oscillator circuit shows how the phase noise can be influenced by tuning the FET's input circuit. The noise tuning of a microstrip oscillator verifies the computation.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 5 )

Date of Publication:

1 March 1990

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