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2-D-3-D crossover in single asymmetric quantum wells: investigation of the electric field and temperature effects

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2 Author(s)
Fanyao Qu ; Dept. de Ciencias Fisicas, Univ. Fed. de Uberlandia, Brazil ; P. C. Morais

The 2-D-3-D crossover in n-doped GaAs-Ga/sub 0.63/Al/sub 0.37/As single asymmetric quantum wells is theoretically investigated. The coupled one-dimensional Schrodinger and Poisson equations are solved self-consistently, in the frame of the finite-difference method. The present study shows that the 2-D-3-D crossover depends upon the geometrical parameters, as for instance, the quantum well width and spacer layer width. It also depends on the temperature and the gate voltage applied on an asymmetric quantum-well-based device. The 2-D-3-D crossover diagrams involving the well width dependence of both the electric field and the temperature are presented and discussed.

Published in:

IEEE Journal of Quantum Electronics  (Volume:36 ,  Issue: 3 )