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High-power CW operation of broad area InGaAlP visible light laser diodes

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5 Author(s)
K. Itaya ; Toshiba Res. & Dev. Center, Kawasaki, Japan ; G. Hatakoshi ; Y. Watanabe ; M. Ishikawa
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Broad area InGaAlP visible light laser diodes with antireflection and high-reflection coatings have been fabricated. High power CW operation above 300 mW was obtained at 2 degrees C heat-sink temperature. This value corresponded to a light power density of 2.7 MW/cm2. The far field pattern showed a single lobe shape for output power up to 100 mW.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 3 )