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Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer

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3 Author(s)
Ishikawa, M. ; Toshiba Corp., Kawasaki, Japan ; Tsuburai, Y. ; Uematsu, Y.

638 nm room temperature (25 degrees C) CW operation was successfully achieved by InGaAlP visible light laser diodes with a quaternary active layer. A transverse mode stabilised selectively buried ridge-waveguide structure was fabricated by metalorganic chemical vapour deposition. The threshold current was 100 mA at 25 degrees C and CW operation was attained at up to 50 degrees C. The oscillation wavelength was the shortest for room temperature CW operations of laser diodes ever reported.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 3 )