Cart (Loading....) | Create Account
Close category search window
 

Photoluminescence spectra of doped and undoped CdS films prepared by spray pyrolysis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Ahmad-Bitar, Riyad N. ; Dept. of Phys., United Arab Emirates Univ., Al-Ain, United Arab Emirates

Large area thin films of n-type CdS:In were prepared by spray pyrolysis technique. The films were n-type doped by having |In/Cd| ion concentration ratio of 10-6, 10-5, 10-4, 10-3, and 10-2 in the sprayed solution. These films were heat treated in N2 atmosphere at 450°C for one hour. The as deposited undoped, doped, and heat treated films were analyzed by photoluminescence (PL) at 5 K sample temperature. In general, the spectra displayed three main emission regions (green, yellow and red) with more than one band in each. The emission intensity is found to decrease with doping and the relative intensity of the bands is found to depend on the doping concentration level. The red band is only present in doped samples and its relative intensity is found to increase with doping. The effect of heat treatment in N2 on the as deposited undoped and the doped (10-4 ) samples on the relative intensity of the observed bands were compared and discussed. The results are compared with the electrical and morphological results and correlated with the probable changes in the concentration of shallow and deep radiative native defects and structural changes. These allow for better prediction of suitable doping and treatment conditions for good quality films

Published in:

Microelectronics, 1998. ICM '98. Proceedings of the Tenth International Conference on

Date of Conference:

1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.