By Topic

Electrical contacts on MOVPE-Grown ZnSe based laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Abdel Naby, M. ; Fac. of Eng., Tanta Univ., Egypt

The electrical characterization of metal contacts to Cl and N-doped ZnSe material systems is reported. Metalorganic vapor phase epitaxy (MOVPE) was used to grow the doped ZnSe samples at 330°C. With intentional chlorine doping using 1-chlorobutane, free electron concentrations of up to 8×1017 cm-3 have been achieved. Photoluminescence (PL) spectra in conjunction with scanning transmission electron microscopy (SEM) were used to verify the layer properties. The turn-on voltage (VT) of Ti/Pd/Au contact on the Cl-doped ZnSe epitaxial layer was significantly reduced by etching the ZnSe surface in NaOH, which was found to be due to removal of the native oxide layer grown on the ZnSe surface. Current-voltage (I-V), capacitance-voltage (C-V) measurements were used to investigate the junction properties of the Au/ZnSe:N structure before and after heat treatment at 400°C for 15 min. in N2 atmosphere. The results indicated that the annealing procedure leads to redistribution of impurities and improves the electrical properties of the samples. C-V measurements on ZnSe:N show semi-insulating behaviour before annealing. However, after heat treatment the layer shows p-type conduction with an acceptor concentration of the order of 2×1016 cm-3

Published in:

Microelectronics, 1998. ICM '98. Proceedings of the Tenth International Conference on

Date of Conference:

1998