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GaAs MESFET amplifiers fabricated on InP substrates

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3 Author(s)
Jichai Jeong ; AT&T Bell Labs., Murray Hill, NJ, USA ; Vella-Coleiro, G.P. ; Yee, C.M.L.

Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3 dB bandwidth of 1 GHz have been measured from the amplifiers.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 2 )