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1.55 mu m high-gain polarisation-insensitive semiconductor travelling wave amplifier with low driving current

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7 Author(s)

Polarisation-insensitive GaInAsP-InP semiconductor amplifiers have been fabricated from gas source molecular beam epitaxy (GSMBE) and a BH laser with multilayer coatings. The TE and TM mode gains are equal to within 1 dB and an average internal gain of 28 dB is obtained at only 50 mA forward current.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 2 )