Referenced Items are not available for this document.
A channel resistance derivative method for extracting the electrical effective channel length and series resistance is proposed, and demonstrated on an advanced 0.35 μm LDD CMOS technology. A clear graphic image of the LEFF and RSD is obtained directly from the measured channel resistance and its derivative with respect to the gate bias. The method also provides guidelines for the proper gate bias range selection in traditional LEFF extraction techniques
Published in:
Electron Devices, IEEE Transactions on
(Volume:47
,
Issue:
3
)
Date of Publication: Mar 2000
- Page(s):
- 648 - 650
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6540366
- Digital Object Identifier :
- 10.1109/16.824743
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Mar 2000
- Sponsored by :
- IEEE Electron Devices Society
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