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A channel resistance derivative method for effective channel length extraction in LDD MOSFETs

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4 Author(s)
Guofu Niu ; Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA ; Cressler, J.D. ; Mathew, S.J. ; Subbanna, S.

A channel resistance derivative method for extracting the electrical effective channel length and series resistance is proposed, and demonstrated on an advanced 0.35 μm LDD CMOS technology. A clear graphic image of the LEFF and RSD is obtained directly from the measured channel resistance and its derivative with respect to the gate bias. The method also provides guidelines for the proper gate bias range selection in traditional LEFF extraction techniques

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 3 )