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An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

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6 Author(s)
Chindalore, G. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Shih, W.K. ; Jallepalli, S. ; Hareland, S.A.
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This work presents for the first time experimental results for the extraction of the increase in the effective electrical oxide thickness (Δtox=tox,expt-tox,physical) in MOS accumulation layers with heavily doped substrates due to quantum mechanical (QM) effects, using experimentally measured MOS capacitance-voltage (C-V) characteristics and experimentally verified fullband self-consistent calculations. In addition, the fullband self-consistent simulations have been extended to accumulation regions, and the experimental results for the accumulation region have been compared with simulations. It has been shown that at moderate to high doping levels, Δtox is as much as 0.4 to 0.5 nm for both electrons and holes, whereas for very high doping levels (>1×1019 cm-3) Δtox approaches zero. Thus, the experimental accumulation capacitance is predicted sufficiently well by the classical analysis itself

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 3 )