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Physical modeling of spiral inductors on silicon

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2 Author(s)
Yue, C.P. ; Center for Integrated Syst., Stanford Univ., CA, USA ; Wong, S.S.

This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 3 )