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Characterization of crosstalk-induced noise for 0.18 /spl mu/m CMOS technology with 6-level metallization using time domain reflectometry and S-parameters

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7 Author(s)
Hi-Deok Lee ; R&D Div., Hyundai MicroElectron., Choongbuk, South Korea ; Myoung-Jun Jang ; Dae-Gwan Kang ; Jeong-Mo Hwang
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Crosstalk-induced noise of 0.18 /spl mu/m CMOS Technology is characterized using time domain reflectometry and scattering parameters. The interconnect lines are quantitatively modeled in RF range, whose accuracy was verified with the use of TDR data and its comparison with HSPICE simulation. The modeled interconnect line is used to simulate comprehensively crosstalk-induced noise voltage in various real routing environments using HSPICE. The crosstalk voltage exhibited a strong dependence on line width rather than line space.

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999