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CoSi/sub 2/ integrated fuses on poly silicon for low voltage 0.18 /spl mu/m CMOS applications

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4 Author(s)
A. Kalnitsky ; Nat. Semicond. Corp., Santa Clara, CA, USA ; I. Saadat ; A. Bergemont ; P. Francis

The manufacturability and integration of the CoSi/sub 2//poly-Si fuse element for sub-0.18 /spl mu/m regime CMOS is demonstrated and evaluated. This paper addresses the mechanism and the driver circuit challenges for fuse programming (given the low operating voltage nature of the 0.18 /spl mu/m technology). This includes exploring different options to deliver the required programming energy, yet complying with low voltage limitation of the technology. Finally, it concludes by presenting the fuse programming characteristics and reliability studies of the high voltage (HV) driver of the circuit.

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999