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Monolithic high-Q overhang inductors fabricated on silicon and glass substrates

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4 Author(s)
Jun-Bo Yoon ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea ; Chui-Hi Han ; Euisik Yoon ; Choong-Ki Kim

We have investigated the RF performance of the micromachined integrated spiral inductors overhanging several tens of microns from the substrate, having at least 10 /spl mu/m in copper thickness. From the experiments, it can be speculated that once the inductor is overhung by at least 30 /spl mu/m, the substrate coupling can be eliminated almost completely, even in the standard silicon substrate, as long as there is no additional support. The inductor overhanging 30 /spl mu/m from the standard silicon substrate has shown an inductance of 1.8 nH with the unprecedented peak Q-factor of 50 at 7 GHz.

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999