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Optimized halo structure for 80 nm physical gate CMOS technology with indium and antimony highly angled ion implantation

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7 Author(s)
Miyashita, K. ; Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan ; Yoshimura, H. ; Takayanagi, M. ; Fujiwara, M.
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Application of heavy ions of antimony and indium to the halo structure of 80 nm physical gate CMOS is optimized theoretically and experimentally. For pMOSFETs, highly angled antimony ion implantation is found to be effective in controlling the short channel effect (SCE) with high drive current and low junction leakage current. In contrast, for nMOSFETs, the highly angled indium halo is not necessarily effective in controlling SCE.

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999