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A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

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13 Author(s)
Freeman, G. ; IBM Corp., Hopewell Junction, NY, USA ; Ahlgren, D. ; Greenberg, D.R. ; Groves, R.
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We present a self-aligned, 0.18 /spl mu/m emitter width SiGe HBT with f/sub T/ of 90 GHz, f/sub MAX/ of 90 GHz (both at V/sub CB/=0.5 V), NF/sub MIN/ of 0.4 dB, and BV/sub CEO/ of 2.7 V. We also demonstrate that this device is integrable with IBM's 0.18 /spl mu/m, 1.8/3.3 V copper metallization CMOS technology with little effect on the CMOS device properties and design rules.

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999