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Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO/sub 4/ laser crystallization

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9 Author(s)
Helen, Y. ; Groupe de Microelectron. et Visualisation, Rennes I Univ., France ; Dassow, R. ; Mourgues, K. ; Bonnaud, O.
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We fabricated low temperature TFTs on low-cost glass substrates for large area electronic applications. A newly developed crystallization method uses a pulsed diode pumped Nd:YVO/sub 4/ laser. The high repetition capability of up to 100 kHz of this laser results in high throughput rates associated with a scanning speed of up to 5 cm/s. One of the remarkable features-of the TFTs is a field effect mobility mean value of 350 cm/sup 2//Vs with a standard deviation of 5%.

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999

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