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Fluctuations of the low frequency noise of MOS transistors and their modeling in analog and RF-circuits

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4 Author(s)

We present a statistical evaluation of the low frequency noise behavior of MOSFETs. Amplitude and frequency of the 1/f-noise of small area devices show fluctuations by more than an order of magnitude. The noise fluctuations are particularly high for analog operating conditions. They are explained by considering the statistical effects of trap number and efficiency. A bias and area dependent worst case description of the noise behavior is given which can easily be included into standard circuit simulation models (e.g. BSIM3).

Published in:

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Date of Conference:

5-8 Dec. 1999