Referenced Items are not available for this document.
In this letter, we demonstrate a high-performance 0.1 /spl mu/m dynamic threshold voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V/sub th/ simultaneously, which results in an excellent performance for the indium-implanted DTMOS.
Published in:
Electron Device Letters, IEEE
(Volume:21
,
Issue:
3
)
Date of Publication: March 2000
- Page(s):
- 127 - 129
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6525245
- Digital Object Identifier :
- 10.1109/55.823577
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 2000
- Sponsored by :
- IEEE Electron Devices Society
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