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High performance 0.1 /spl mu/m dynamic threshold MOSFET using indium channel implantation

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4 Author(s)
Sun-Jay Chang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chun-Yen Chang ; Tien-Sheng Chao ; Tiao-Yuan Huang

In this letter, we demonstrate a high-performance 0.1 /spl mu/m dynamic threshold voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V/sub th/ simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 3 )

Date of Publication:

March 2000

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