By Topic

Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
M. J. Hamp ; Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada ; D. T. Cassidy ; B. J. Robinson ; Q. C. Zhao
more authors

Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures were designed to study the effect of the thickness of the barriers on the distribution of carriers amongst the quantum wells by comparing the transition cavity lengths (TCL) of mirror image AMQW lasers. The TCL method provides a quantitative measure of the degree to which the uneven carrier distribution affects the net gain of wells owing to the position of the well in the active region. We experimentally demonstrate that reducing the thickness of the barrier layers from 100 to 50 /spl Aring/ results in a significantly more uniform carrier distribution. The thickness of the barriers is thus shown to be an important design parameter for MQW lasers.

Published in:

IEEE Photonics Technology Letters  (Volume:12 ,  Issue: 2 )