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Resonant gate commutated thyristor (RGCT)-a new snubberless turn-off GTO

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3 Author(s)
Yuxin Li ; Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Huang, A.Q. ; Motto, K.

A new family of snubberless turn-off GTO, the resonant gate commutated thyristor (RGCT) is proposed and investigated. By using a transient high commutation voltage, the RGCT can achieve unity turn-off gain and snubberless turn-off capability-even with a relatively high gate loop stray inductance. Therefore, conventional GTOs with flexible gate lead can be used to achieve state-of-the-art performance similar to that of the integrated gate commutated turn-off thyristor (IGCT). Detailed current commutation analysis and experimental results are presented

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Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE  (Volume:2 )

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