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Comparison of the state-of-the-art high power IGBTs, GCTs and ETOs

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3 Author(s)
K. Motto ; Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Y. Li ; A. Q. Huang

In this paper, a comparison of three semiconductor devices suitable for high power applications is presented. All devices feature high switching speed and snubberless turn-off capability. The devices compared include one high voltage insulated gate bipolar transistor (HVIGBT) and two types of hard-driven GTO thyristor-the gate commutated turn-off (GCT) thyristor and the emitter turn-off (ETO) Thyristor. The conduction and switching characteristics are compared, and an assessment is presented of the impact on high-power converter circuits for these devices. Test results are shown

Published in:

Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE  (Volume:2 )

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