Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions

An analysis of the behavior of 600 V PT and NPT IGBTs under following cases of short circuit is reported: (1) the short circuit occurs before the device actively turns on; (2) the short circuit occurs when the device is conducting; and (3) as case (1), but operating at low intermediate voltage and with high stray inductance. The analysis is performed using both experimental results and SPICE-simulations.