By Topic

Nonlinear saturation behaviors of high-speed p-i-n photodetectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Huang, Yong-Liang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Sun, Chi-Kuang

We present numerical simulations of the ultrafast transport dynamics in an ultrahigh-speed double-heterostructure p-i-n photodetector. Nonlinear saturation behaviors under high field and high power illumination are investigated with the external circuit response considered. Damping constants and diffusion constants are both treated as electric-field- and carrier-concentration dependent in our model in order to take into account the effect of carrier scattering. We have also considered the carrier trapping at the heterostructure interfaces for the first time. Besides the drift-induced space charge screening effect, we find that saturation of external circuit and carrier-trapping-induced screening effect are also the dominant mechanisms contributed to the nonlinear bandwidth reduction under high power illumination. On the other hand, previously reported plasma oscillations are found to be greatly suppressed by including strong carrier diffusion effect in the model.

Published in:

Lightwave Technology, Journal of  (Volume:18 ,  Issue: 2 )