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A behavioral model of a 1.8-V flash A/D converter based on device parameters

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4 Author(s)
Hasan, M. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Shen, H.-H.P. ; Allee, D.R. ; Pennell, M.

A behavioral model of a 1.8-V, 6-bit flash analog-to-digital converter has been developed based on device parameters using the gm/Id methodology. This approach eliminates the need for recharacterization of blocks when device sizes are changed. Furthermore, the performance can be predicted with input only from device and process simulators eliminating the need for a circuit simulator and associated model parameters. Signal to noise plus distortion ratio and differential and integral nonlinearity are predicted and verified at lower resolution with a circuit simulator

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:19 ,  Issue: 1 )