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High magnetoresistance in sputtered Permalloy thin films through growth on seed layers of (Ni0.81Fe0.19)1-xCrx

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3 Author(s)
Lee, W.Y. ; Almaden Res. Center, San Jose, CA, USA ; Toney, M.F. ; Mauri, D.

The use of thin (Ni0.81Fe0.19)1-xCrx seed layer for obtaining high anisotropic magnetoresistance in Permalloy (Ni0.81Fe0.19) films is reported. The process yields a high ΔR/R of for example, 3.2% for 120-Å-thick NiFe, without high-temperature deposition or annealing. X-ray diffraction shows that the NiFeCr seed layer causes the formation of large [111] textured grains in the Permalloy film, and that the interface between these two layers is quite smooth. These both increase the ΔR and reduce the resistance R in the film, which lead to the high ΔR/R. Also discussed is the enhanced ΔR/R and thermal stability trilayer magnetoresistive sensors using this NiFeCr instead of Ta as a spacer.

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Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 1 )