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Characterization and simulation of GaSb device-related properties

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3 Author(s)
Stollwerck, G. ; Freiburg Mater. Res. Center, Germany ; Sulima, Oleg V. ; Bett, A.W.

Device related parameters of GaSb are characterized and simulated based on measurements of photovoltaic cells. Internal quantum efficiencies are simulated to quantify the contributions from band-gap narrowing and the main recombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall recombination. A detailed study of the recombination mechanisms values shows differences between literature data and data derived from comparison of simulation results with measurements on real devices. A new evaluation of these data is given. The evaluation of the band-gap narrowing in n-GaSb is performed by comparison of measurements and simulations of the injection component of the dark current I01 and open-circuit voltage. For the first time, a range of possible values for the intrinsic carrier concentration of GaSb at room temperature is given, based on theoretical calculations, and proven with comparison of measured lot and open-circuit voltages of GaSb photovoltaic devices

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 2 )

Date of Publication:

Feb 2000

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