By Topic

New aspects and mechanism of kink effect in static back-gate transconductance characteristics in fully-depleted SOI MOSFETs on high-dose SIMOX wafers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ushiki, T. ; New Ind. Creation Harchery Center, Tohoku Univ., Sendai, Japan ; Kotani, K. ; Funaki, T. ; Kawai, K.
more authors

An extraordinary kink phenomenon in static back-gate transconductance characteristics of fully-depleted SOI MOSFETs has been experimentally investigated and characterized for the first time. This kink phenomenon has been observed in both NMOS and PMOS on high-dose SIMOX wafers under steady-state conditions at room temperature. It was also found that the back-gate characteristics for both NMOS and PMOS show anomalous shift phenomenon in drain current-back gate voltage (I D-VG2) curve at the back-gate voltage corresponding to the kink phenomenon. This kink phenomenon has been attributed to the presence of energetically-localized trap states at SOI/BOX interface. In order to clarify the energy level of the trap states at SOI/BOX interface corresponding to the kink, we have developed a new formula of surface potential in thin-film SOI MOS devices, in which the potential drop across semiconductor-substrate is taken into account. By using this new formula, me have demonstrated that high-dose SIMOX wafers have donor-like electron trap states at ~0.33 eV above the Si midgap with the density of ~N6.0~1012 cm-2 eV -1 and donor-like hole trap states at ~0.35 eV below the Si midgap with density of ~1.5×1012 cm-2 eV-1 at SOI/BOX interface

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 2 )