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Annealing behavior of a proton irradiated AlxGa1-x N/GaN high electron mobility transistor grown by MBE

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11 Author(s)
Cai, S.J. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Tang, Y.S. ; Li, R. ; Wei, Y.Y.
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The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-x N/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800°C

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 2 )