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Mesh structure adjustment in 2D simulation of VLSI super self-aligned Si bipolar transistor

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2 Author(s)
Suligoj, T. ; Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia ; Biljanovic, P.

The fabrication process of a high-speed, deep-trench, double polysilicon super-self-aligned silicon bipolar transistor is simulated by a 2D simulation program, assuming 0.25 μm design rules. The effect of the simulation mesh on the doping profiles of intrinsic and extrinsic transistor, deposited layers and electrical characteristics are analyzed

Published in:

Africon, 1999 IEEE  (Volume:2 )

Date of Conference:

1999

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