Mesh structure adjustment in 2D simulation of VLSI super self-aligned Si bipolar transistor

The fabrication process of a high-speed, deep-trench, double polysilicon super-self-aligned silicon bipolar transistor is simulated by a 2D simulation program, assuming 0.25 /spl mu/m design rules. The effect of the simulation mesh on the doping profiles of intrinsic and extrinsic transistor, deposited layers and electrical characteristics are analyzed.