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A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology

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3 Author(s)
Knapp, H. ; Corp. Res. Dept., Infineon Technol. AG, Munich, Germany ; Wilhelm, W. ; Wurzer, M.

In this paper, we present a low-power static frequency divider with a divide ratio of eight. It operates up to 15 GHz, consuming only 22 mA from a 3.6-V supply. The chip is manufactured in a 0.8-μm silicon bipolar production technology with a cutoff frequency of 25 GHz. The circuit has a single-ended input and output and is mounted in a six-pin SOT363 plastic package

Published in:
Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 2 )

Date of Publication: Feb 2000

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