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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

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7 Author(s)
Khan, M.A. ; Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA ; Hu, X. ; Sumin, G. ; Lunev, A.
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We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-μ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET was more than six orders of magnitude smaller than for the HFET.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 2 )