The development of a GaAs-AlGaAs multiple quantum well electron transfer waveguide modulator is reported. On-off ratios as high as 75:1 are obtained at 864.5 nm of an applied voltage of -5 to 10 V. It is shown that the wavelength and voltage characteristics of the device can be successfully interpreted in terms of the calculated energy band diagram.<
Published in:
Photonics Technology Letters, IEEE
(Volume:3
,
Issue:
4
)
Date of Publication: April 1991