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A low-gate-leakage-current GaAs MESFET with a thin epitaxial silicon layer

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6 Author(s)
J. C. Costa ; Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA ; T. J. Miller ; Z. Abid ; F. Williamson
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An n-channel depletion-mode GaAs MESFET with an Al gate and a 6-A epitaxial Si layer between the metal and the GaAs, grown in situ by molecular beam epitaxy, is described. Its DC electrical characteristics are compared with a similar control structure grown without the Si layer. The gate leakage current in the Al/Si/GaAs MESFETs was three to four orders of magnitude lower than in the control structure, due to all increased barrier height in the Al/Si/n-GaAs Schottky gate of 1.04 eV, versus 0.78 eV for the Al/n-GaAs structure. The differences in threshold voltages, I-V characteristics, and transconductances between the two devices are consistent with an enhanced effective barrier height for the Al/Si/GaAs MESFET.<>

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IEEE Electron Device Letters  (Volume:12 ,  Issue: 6 )