By Topic

A simple technique for measuring the generation lifetime in SOI-substrate material using the principle of charge centroids

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
L. J. McDaid ; Dept. of Electr. Eng. & Electron., Liverpool Univ., UK ; S. Hall ; W. Eccleston ; J. C. Alderman

A charge-time measurement, utilizing the charge-centroid principle, is presented for the rapid assessment of silicon-on-insulator (SOI) substrates. The technique is applicable to technologies which involve the formation of a buried dielectric layer with a thin-film body region wherein devices are formed. The measurement is routine and only requires a simple two-terminal SOI capacitor from which the quality of the body region, as indicated by the lifetime, can be assessed prior to device fabrication. This measurement can be carried out on any combination of dopant type. All parameters required by the analysis are obtainable from a simple two-terminal CV plot.<>

Published in:

IEEE Electron Device Letters  (Volume:12 ,  Issue: 6 )