Referenced Items are not available for this document.
A GaAs layer grown by molecular beam epitaxy at 200 degrees C is used as the gate insulator for GaAs MISFETs. The gate reverse breakdown and forward turn-on voltages, are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel. It is shown that a reverse bias of 42 V or forward bias of 9,3 V is needed to reach a gate current of 1 mA/mm of gate width. A MISFET having a gate of 1.5*600 mu m delivers an output power of 940 mW (1.57-W/mm power density) with 4.4-dB gain and 27.3% power added efficiency at 1.1 GHz. This is the highest power density reported for GaAs-based FETs.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
6
)
Date of Publication: June 1991
- Page(s):
- 306 - 308
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3971459
- Digital Object Identifier :
- 10.1109/55.82069
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- June 1991
- Sponsored by :
- IEEE Electron Devices Society
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