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High temperature characteristics of highly strained 1.2 /spl mu/m InGaAs/GaAs quantum well lasers

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6 Author(s)
Chen, Z.B. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Schlenker, D. ; Koyama, F. ; Miyamoto, T.
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We have demonstrated highly strained 1.2 /spl mu/m InGaAs/GaAs double quantum well lasers with excellent temperature characteristics. The threshold current density was as low as 340 A/cm/sup 2/ for a 2 mm long broad-area laser. A record high characteristic temperature of 154 K was obtained up to 140/spl deg/C for a 540 /spl mu/m long ridge waveguide laser.

Published in:

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference  (Volume:2 )

Date of Conference:

18-22 Oct. 1999